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NVTS
NASDAQ Technology

US Army Taps Navitas for Next-Gen Silicon Carbide Development

Tom Rudovsky · Reported by Seeking Alpha
More coverage: Semiconductor Stocks · Technology
Sentiment info
Positive
Importance info
8
Price
$13.58
Mkt Cap
$3.063B
52W Low
$6.22
52W High
$34.17
52W Position info
118% above low
Off High info
60% below high
Rel. Volume info
1.2× avg
Market data snapshot near publication time

NVTS has more than doubled off its 52-week low of $6.22.

Summary

The US Army has selected Navitas to develop next-generation 10 kV silicon carbide power semiconductor technology under a grant, a significant validation for the company's power semiconductor roadmap. The program, named ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT), is a prototype project sponsored by the Army Research Laboratory under the U.S. Army Combat Capabilities Development Command and supported by the Joint Experimentation and Technology Accelerator. It aims to develop and validate a novel domestic manufacturing process for 10 kV silicon carbide insulated-gate bipolar transistors and associated PiN diode technologies, built on Navitas' trench-assisted planar (TAP) architecture. Navitas was selected after a competitive evaluation among leading U.S. silicon carbide technology companies, with the Army citing its leadership in ultra-high-voltage SiC innovation and U.S.-anchored manufacturing ecosystem. The technology is intended for mission-critical defense systems. Navitas shares rose 8.87% to $12.77 after the award announcement. This follows a period of legal challenges and a major acquisition, but the Army contract provides a high-profile government endorsement and potential revenue stream. The news is likely to drive positive sentiment and could lead to further defense-related opportunities. Investors should watch for contract details and any additional government partnerships.

Updated with a Benzinga report · What changed

Updates

  1. · Benzinga — Navitas shares rose 8.87% to $12.77 after the Army award announcement.

    • Program Details
      • The technology to be developed is 10 kV silicon carbide power semiconductor technology.
      • The program is named ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT).
      • It is a prototype project.
      • The project is sponsored by the Army Research Laboratory under the U.S. Army Combat Capabilities Development Command.
      • It is supported by the Joint Experimentation and Technology Accelerator.
      • The aim is to develop and validate a novel domestic manufacturing process for 10 kV silicon carbide insulated-gate bipolar transistors and associated PiN diode technologies.
      • The program will develop 10 kV SiC IGBTs built on its trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.
    • Selection Rationale — Navitas was selected after a competitive evaluation among leading U.S. silicon carbide technology companies, with the Army citing its leadership in ultra-high-voltage SiC innovation and U.S.-anchored manufacturing ecosystem.
    • Intended Use — The developed technology is intended for mission-critical defense systems.
    All 10 details
    • The technology to be developed is 10 kV silicon carbide power semiconductor technology.
    • The program is named ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT).
    • It is a prototype project.
    • The project is sponsored by the Army Research Laboratory under the U.S. Army Combat Capabilities Development Command.
    • It is supported by the Joint Experimentation and Technology Accelerator.
    • The aim is to develop and validate a novel domestic manufacturing process for 10 kV silicon carbide insulated-gate bipolar transistors and associated PiN diode technologies.
    • Navitas was selected after a competitive evaluation among leading U.S. silicon carbide technology companies.
    • The program will develop 10 kV SiC IGBTs built on its trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.
    • The Army cited Navitas’ leadership in ultra-high-voltage SiC innovation and its U.S.-anchored manufacturing ecosystem as reasons for selection.
    • The developed technology is intended for mission-critical defense systems.

At the time of this announcement, NVTS was trading at $13.58 on NASDAQ in the Technology sector, with a market capitalization of approximately $3.1B. The 52-week trading range was $6.22 to $34.17. This news item was assessed with positive market sentiment and an importance score of 8 out of 10. Source: Seeking Alpha.


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